COMMISSION D : ELECTRONICS AND PHOTONICS (Nov. '89 - Oct. '92)

Edited by Kunio Tada

D1. Solid State Microwave Sources

Pseudomorphic HEMTs provide the following super-low-noise operation to enhance power handling application in the millimeter-wave region: An enhancement-mode pseudomorphic inverted HEMT with 0.2-mm gates achieved a noise figure of 0.56 dB at 12 GHz [Ohmuro et al. 1991]. A multifeed gate configuration using air-bridge metallization applied to 0.25-mm AlGaAs/InGaAs pseudomorphic HEMT achievd a minimum noise figure of 0.55 dB at 12 GHz [Hosogi et al., 1991]. An InP-based InAlAs/InGaAs HEMT with 0.18-mm-gate length acheived a minimum noise figure of 0.43 dB and an associated gain of 8.5 dB at 26 GHz [Umeda et al., 1992]. A W-band single-stage monolithic gain block using 0.1-mm-gate planar-doped pseudomorphic HEMT achieved a gain of 3.1 dB and a noise figure of 4.5 dB over 94-98 GHz [Yoshinaga et al., 1992]. An AlGaAs/InGaAs pseudomorphic HEMT achieved an output power of 23.4 dBm at 55 GHz [Arai et al., 1991]. An N-/N+GaAs/InGaAs/GaAs HEMT structure having a breakdown voltage exceeding 20 V achieved a maximum output power of 4.7W in the Ku-band [Fujii et al., 1991]. A 0.1-mm-gate super HEMT applied to a reflection oscillator in the millimeter-wave region achieved an oscillation power of 2.6 dBm and an efficiency of 9.5% at 60 GHz [Saito et al., 1991].

Internally matched, highly efficient linear power GaAs MESFETs with output power exceeding 20 W in the C-band were achieved using multichip technology [Yanagawa et al.,1990, and Taniguchi et al., 1990]. A high-power onboard amplifier operating at 38 GHz was achieved using four types of GaAs MMIC. The amplifier's final-stage MMIC delivered an output power of 0.3 W [Asano et al., 1990].

Monolithic low-phase noise oscillator ICs for the Ku-band were fabricated as an AlGaAs/GaAs HBT. A 15-GHz VCO IC was constructed from HBTs and varactor diode. A tuning range of 600 MHz was obtained for a phase noise level of -85 dBc/Hz at an offset frequency of 100 kHz [Yamauchi et al., 1991]. A 22-GHz HBT oscillator fabricated using a dual-sidewall self-aligned process achieved an output power of 6.2 dBm and a phase noise of -78 dBc/Hz at a 100 kHz off-carrier [Hayama et al., 1992].

A 1/8 DCFL dynamic frequency divider was developed using 0.2-mm-gate GaAs buried P-layer MESFETs. The shortest propagation delay to date of 6.7 ps/gate at 20.8 mW/gate was achieved using a DCFL ring oscillator [Nishi et al., 1990]. A 1/4 static frequency divider using AlGaAs/GaAs HBTs achieved 34.8 GHz at a power dissipation of 495 mW [Yamauchi et al., 1992]. An epitaxially grown base silicon transistor integrated with a 1/8 frequency divider achieved a maximum operating frequency of 11.7GHz [Yamazaki et al., 1990]

Several types of low-noise MMIC block converter (LNB) have been developed for Ku-band DBS and/or satellite communications: A conversion gain of 52 dB and a noise figure of 2.1 dB were achieved using four types of MMIC chip [Shiga et al., 1991]. A Ku-band LNB for the DBS on a 1.7 mm x 2.05 mm chip achieved a conversion gain exceeding 36 dB [Sakuno et al., 1992]. Another Ku-band LNB MMIC, which included a prescaler to increase the local oscillator's purity and stability was fabricated on a 1.2 mm x 2.8 mm chip [Kaneko et al., 1992].

(H. Takanashi)

References

Asano, Y., N.Okubo, M.Shigaki, M.Shimada, Y.Suzuki, Y.Arimoto, and T.Shiomi, A 38-GHz on-board solid-state power amplifier for millimeter-wave satellite communication, AIAA ICSSC, 741-746 (1990)

Arai, S., H.Kojima, K.Otsuka, M.Kawano, H.Ishimura, and H.Tokuda, U-band 200mW pseudomorphic InGaAs power HEMT, IEEE GaAs IC Symp., 105-108 (1991)

Fujii, T., S.Sakamoto, T.Sonoda, N.Kasai, S.Tsuji, M.Yamanouchi, S.Takamiya, and Y.Kashimoto, New pseudomorphic N-/N+GaAs/InGaAs/GaAs power HEMT with high breakdown voltages, IEEE GaAs IC Symp., 109-112 (1991)

Hayama, N., J.Shimizu, and K.Honjyo, Large-signal parameter modeling for Al/GaAs HBT and its application to a monolithic 22GHz-band oscillator, IEICE Trans. Electron, 683-688 (1992).

Hosogi, K., T.Katoh, H.Matsuoka, H.Minami, K.Kosaki, K.Nagahara, K.Nishitani, and M.Otsubo, Low noise HEMTs with multi-feed gate configurations, IEEE MTT-S, 1279-1282 (1991)

Kaneko, T., T.Miya, and S.Yoshida, A Ku band converter IC, IEEE MTT-S, 451-454 (1992)

Nishi, S., H.Tsuji, H.I.Fujishiro, and K.Tanaka, A 36GHz 1/8 frequency divider with GaAs BP-MESFET's, IEEE IEDM, 305-308 (1990)

Ohmuro, K., H.I.Fujishiro, M.Itoh, H.Nakamura, and S.Nishi, Enhancement-mode pseudomorphic inverted HEMT for low noise amolifier, IEEE MTT-S, 709-712 (1991)

Saito, T., Y.Ohashi, Y.Kawasaki, N.Okubo, and Y.Mimino, Millimeter-wave HEMT Oscillators, IEICE Trans. Electron, 4119-4123 (1991)

Sakuno, K., T.Yoshimasu, N.Matsumoto, T.Tsukao, Y.Nakagawa, E.Suematsu, and E.Tomita, A miniature low current GaAs MMIC downconverter for Ku-band broadcast satellite applications, IEEE MMWMC, 101-104 (1992)

Shiga, N., T.Sekiguchi, S.Nakajima, K.Otobe, N.Kuwata, K.Matsuzaki, and H.Hayashi, MMIC family for DBS downconverter with pulse-doped GaAs MESFETs, IEEE GaAs IC Symp., 139-142 (1991)

Taniguchi, Y., Y.Hasegawa, Y.Aoki, and J.Fukaya, A C-band 25 watt linear power FET, IEEE MTT-S, 981-984 (1990)

Umeda, Y., T.Enoki, K.Arai, and Y.Ishii, Silicon nitride ultra low noise InAlAs/InGaAs HEMT's with n+InGaAs/n+InAlAs cap layer, IEICE Trans. Electron, 649-655 (1992)

Yamauchi, Y., O.Nakajima, K.Nagata, H.Ito, and T.Ishibashi, A 34.8GHz 1/4 static frequency divider using AlGaAs/GaAs HBTs, IEICE Trans. Electron, 1105-1109 (1992)

Yamauchi, Y., H.Kamitsuka, M.Muraguchi, and K.Osafune, A 15-GHz monolithic low phase noise VCO using AlGaAs/GaAs HBT, IEEE GaAs IC Symp., 259-262 (1991)

Yamazaki, T., I.Numura, A.Tahara, and T.Ito, A 11.7GHz 1/8-divider using 43GHz Si high speed bipolar transistor with photoepitaxially grown ultra-thin base, IEEE IEDM, 309-312 (1990)

Yanagawa, S., K. Takagi, and Y.Yamada, 5-GHz Band 30 Watt Power GaAs FETs, IEEE MTT-S, 985-987 (1990).

Yoshinaga, H., B.Abe, K.Shibata, H.Kawasaki, M.Ohtomo, and I.Tokaji, Millimeter-wave monolithic gain block amplifier using pseudomorphic HEMT, IEEE MTT-S, 583-586 (1992)



D2. Gas and Solid-State Lasers

Development of microwave or RF discharge excited CO2 lasers are marked. By using 2.45GHz microwave discharge, a compact diffusion cooled CO2 laser with 40cm discharge length was constructed which delivered an average power of 116W, the maximum conversion efficiency 18% and a peak output power of 1.2kW [Nishimae, 1990]. CO2 laser excitation characteristics of 1MHz RF discharge was studied experimentally, and compared with those of 13.56MHz [Terai, 1992]. A novel negative-branch unstable resonator(M=-1.5) with a phase-unifying output coupler for a 5kW CW CO2 laser, was proposed and characterized experimentally [Takenaka, 1992]. Effect of gas temperature on CO2 lasers was analytically and experimentally investigated by using a simple and practicalproposed model [Kuzumoto, 1991].

Discharge excited rare gas halide excimer lasers are developed extensively for a national project in Japan, that is cold AMMTRA project [Maeda,1992], which started in 1986 fiscal year. Final goals of this project in 1993 fiscal year, are achieving a high power of 2kW at 500Hz for a XeCl laser [Inoue, et al., 1991], a high repetition-rate of 5kHz for a 500W XeCl laser [Goto, et al.,1992], a high power stability below +/-1% for a 400W XeCl laser, a long gas lifetime of 109 shot for an ArF laser [Saito, et al.,1993] and a narrow spectral width less than 1pm for a 200W ArF laser [Ochi, et al., 1992]. Spectral narrowing KrF excimer lasers for lithography light sources for 64Mbit and 256Mbit DRAM, are being developed [Mizoguchi, et al.,1992], which will be introduced in actual LSI processing lines after two or three years.

A chemical oxygen-iodine laser(COIL) with a high CW power of kW class was developed for industrial applications(Wani, et al.,1992) which is used for studying material processing at .3 mm wavelength. Laser beam from this COIL was analyzed [Muro, et al.,1992]. A pulsed iodine laser driven by a chemical oxygen generator was developed. The pulse energy was 2.5J, the maximum peak power was 900W and pulse width was from 2ms to 5ms [Endo, et al.,1991, Endo, et al.,1992]. A high energy pulsed H2/F2 chain first vibrational overtone HF chemical laser and a H2/SF6 nonchain first vibrational overtone HF chemical laser were theoretically studied [Ashidate, et al.,1991].

High-power copper vapor lasers(CVL) are being developed for uranium laser isotope separations(Morioka, 1993). To obtain a high power for CVL, a large bore discharge tubes and a H2 addition gas are used. A 120W power was obtained continuously for 26 hours with a 8cm diameter bore tube of 1.5m discharge length [Hayashi, 1992]. A high power of 210W was achieved by using a 8cm diameter and 2.1m length bore tube [Tabata, 1992]. Copper densities at the ground state and the upper state were measured for a large bore CVL(Hayashi 1992). Influence of a H2 gas addition in a large bore CVL was studied experimentally [Watanabe, 1992].

Large symmetrical near-diffraction-limited beams have been extracted from a Nd:YAG rod pumped by a Kr-arc lamp using a negative-branch unstable resonator with a phase-unifying output coupler [Yasui et al., 1990]. Significant improvement of slab-laser beam divergence has been achieved by using an off-axis unstable-stable resonator for an Nd:GGG slab laser [Kuba et al., 1990]. Optical characteristics and laser oscillation characteristics have been investigated for a composite glass slab laser [Tajima et al., 1992]. A 2.1 mm Cr3+,Ho3+,Ho3+:YAG laser have been operated with an output power 20W at 12Hz[Imai et al., 1990].

Diode-pumped solid-state lasers have made rapid progress in many aspects. Small-sized Nd:YAG slab laser [Ishimori et al.,1992], array-LD end-pumped Nd:YAG laser [Yamaguchi et al.,1992], highly frequency-stabilized Nd:YAG ring laser [Uehara et al.,1993], fourth harmonic generation from all-solid state cw Nd:YAG laser [Oka et al.,1992], efficient Nd:YVO4 laser [Nagamoto et al., 1990] have been achieved. Efficient and stable operation of frequency-doubled Nd:YAG or Nd:YVO4 green microlasers have been applied to optical storage [Masuda et al.,1992; Nagai et al.,1992; Tatsuno et al.,1992].

(F. Saito)

References

Ashidate,S., T.Takashima, F.Kannari, M.Obara, Theoretical study of a high-energy pulsed H2/F2 chain first vibrational overtone HF chemical laser, J. Appl. Phys., 70, (2), 548-553 (1991)

Ashidate,S., T.Takashima, F.Kannari, M.Obara, Theoretical study of a high energy pulsed H2/SF6 nonchain first vibrational overtone HF chemical laser, J. Appl. Phys., 69, (1), 39-43 (1991)

Endo,M., K.Shiroki, T.Uchiyama, Chemical pumped atomic iodine-pulsed laser, Appl. Phys. Lett., 59, 891-892 (1991)

Endo,M., K.Kodama, Y.Handa, T.Uchiyama, Performance characteristics of a high-pressure singlet oxygen generator, J.Appl. Phys., 71, 5761-5767 (1992)

Goto,T., S.Tkagi, N.Okamoto, K.Kakizaki, S.Sato, Ultrahigh repetition rate and high-power XeCl excimer laser, CLEO'92 Technical Digest, 214-215 (1992)

Hayashi,K., Y.Iseki, S.Suzuki, I.Watanabe, E.Noda, O.Moriyama, Improvement in the output characteristics of a large bore copper vapor laser by hydrogen, Jpn J. of Appl. Phys. 2, 31, 1689-1691 (1992)

Hayashi,K., E.Noda, Y.Iseki, I.Watanabe, S.Suzuki, O.Moriyama, Copper density measurement of a large bore CVl., Proc. of SPIE, 1628, Int. Soc. Opt.Eng., 44-51(1993)

Imai S., T.Yamada, Y.Fujimori, and K.Ishikawa, A 20W Cr3+,Ho3+,Ho3+:YAG laser, Opt Laser Technol., 22, 351-353 (1990)

Inoue,M., Y.Sato, S.Fujikawa, K.Haruta, High average power XeCl laser with a spiker-sustainer circuit and surface corona preionization, LEOS'91 Conference Digest, 58 (1991)

Ishimori,A., T.Yamamoto, T.Uchiumi, S.Yagi, and K.Shigihara, Pumping confi-guration without focusing lenses for a small-sized diode-pumped Nd:YAG slab laser, Opt.Lett., 17,40-42 (1992)

Kuba, K., T.Yamamoto, and S.Yagi, Improvement of slab-laser beam divergence by using an off-axis unstable-stable resonator, Opt Lett.,15, 121-123 (1990)

Kuzumoto,M., M.Tanaka, S.Yagai, Practical model for gas temperature effects on laser, IEEE J. of Quantum Electronics, 27, 471-475 (1991)

Maeda,M., Progress on the AMMTRA Project for Excimer Laser Development, CLEO'92 Technical Digest, 84-86 (1992)

Masuda,H., F.Maeda, M.Oka, Y.Kaneda, M.Sugiura, and S.Kubota, Miniature integrated SHG green laser,Compact Blue-Green Lasers'92 Technical Digest,FA 3-1 (1992)

Mizoguchi,H., O.Wakabayashi, N.Itoh, M.Kowaki, J.Fujimoto, Y.kobayashi, T.Ishihara, Y.Amada, Y.Nozue, Narrow Band KrF Laser for Mass Production of LSI Cs, SPIE Proceedings, 1674 Optical/Laser Microlithography V, 532-542(1992).

Morioka,N., New Japanese AVLIS program, Proc. of SPIE, 1859, Laser Isotope Separation (under publishing), 1-12 (1993)

Muro,M., H.Tsuji, M.Iizuka, F.Wani, T.Matsumoto, N.Naito, T.Nagai, H.Fujii, T.Atsuta, Beam analysis for chemical oxygen-iodine laser, Proc. of LAMP'92, 105-110 (1992)

Nagai,H., M.Kume, I.Ohta, H.Shimizu, and M.Kazumura, Low-noise operation of a diode-pumped intracavity-doubled Nd:YAG laser using a brewster plate,IEEE J.Quantum Electron., 28, 1164-1168(1992)

Nagamoto,H., M.Nakatsuka, K.Naito, M.Yamanaka, K.Yoshida, T,Sasaki, T.Kanabe, S.Nakai, S.Saito and Y.Kuwano, Laser diode pumped Nd:YVO4 laser,Lev.Laser Eng.,639-645 (1990)

Nishimae,J., and K.Yoshizawa, Development of CO2 laser excited by 2.45GHz microwave discharge, Proc. of SPIE, 1225, High-Power Gas Lasers, 340-348 (1990)

Ochi,H., T.Nisisaka, K.Sajiki, Y.Itakura, R.Noudomi, M.Kakimoto, High-power narrow line width ArF laser, CLEO'92 Technical Digest, 86-87 (1992).

Oka,M., N.Eguchi, S.Masuda and S.Kubota, All-solid-state continuous wave 0.1-W ultraviolet laser, CLEO'92 Technical Digest, 374 (1992)

Saito,T., S.Ito, A.Tada, K.Hotta, Long gas lifetime discharge-excited ArF excimer laser, CLEO'93 CWJ19 (1993)

Tabata,Y., K.Hara, S.Ueguri, Lasing Characteristics of a large bore copper vapor laser, Proc. of SPIE, 1628, Int. Soc. Opt. Eng., 32-43 (1993).

Tajima, H., M.Moriyama, N.Tadokoro, H.Hara, and T.Mochizuki, Performance of composite glass slab laser, IEEE J Quantum Electron., 28, 1562-1570 (1992)

Takenaka,Y., M.Kuzumoto, K.Yasui, A 5kHz CW CO2 laser using a novel negative-branch unstable resonator with a phase-unifying output coupler, IEEE J. of Quantum Electronics, 28, 1855-1858 (1992)

Tatsuno,K., T.Andou, S.Nakatsuka, T.Miyai, M.Takahashi and S.Helmfrid, Highly efficient and stable green microlaser consisting of Nd:YVO4 with intracavity KTP for optical storage, CLEO'92 Technical Digest, 374(1992)

Terai,K., T.Murata, S.Kobayashi, T.Tamagawa, Laser pulsing characteristics of RF excited high power CO2 laser at a frequency of 1MHz, Proc. of LAMP'92, 79-83 (1992)

Uehara,N. and K.Ueda, 193-mHz beat linewidth of frequency-stabilized laser-diode-pumped Nd:YAG ring lasers,Opt.Lett.,18,505-507(1993)

Watanabe,I., Y.Iseki, K.Hayashi, S.Suzuki, E.Noda, O.Moriyama, Influence of H2 gas addition and long time operation in a 80o CVL., CLEO'92 Technical Digest, 546-548(1992).

Wani,F., N.Naito, T.Nagai, H.Tsuji, H.Fujii, Development of 1kW Iodine Laser for Industrial Use, Proc. of LAMP'92, 127-132 (1992)

Yamaguchi,S.and Imai H., Efficient Nd:YAG laser end-pumped by a 1cm aperture laser-diode bar with a GRIN lens array coupling,IEEE J.Quantum Electron., 28, 1101-1105(1992)

Yasui, K., S.Yagi and M.Tanaka, Negative-brance unstable resonator with phase unifying output coupler for high power Nd:YAG lasers, Appl Opt., 29, 1277-1280 (1990)



D3. Semiconductor Lasers and Detectors

InGaAsP/InP distiributed feedback (DFB) lasers operating in a single longitudinal mode at wavelength of 1.3 and 1.55 mm have been extensively studied for applications to high-bit-rate and coherent optical communications. Multi-quantum well (MQW) structure was applied in the active layer of DFB laser to utilize its quantum size effect. Spectral chirping of 1.55 mm DFB laser under 10 Gbit/s direct modulation was decreased to be (1/2-1/3) times smaller than that of bulk-DFB laser, by applying unstrained MQW and strained MQW structures [Uomi et al., 1990, Hirayama et al, 1991]. The intrinsic modulation bandwidth of semiconductor lasers limited by nonlinear gain saturation was studied from the viewpoint of the optimization on the number of quantum wells in 1.55 mm MQW-DFB lasers [Uomi et al., 1993]. Spectral linewidth less than 100 kHz has been achieved using long cavity with suppressing spatial hole burning. An 85 kHz linewidth was obtained by MQW-DBR laser[Kunii et al., 1991] and a 56 kHz linewidth was obtained by MQW-DFB laser with special grating [Okai et al.,1992]. Selective area MOVPE growth was newly proposed and successfully introduced in MQW electro-absorption modulator/DFB laser integrated light source [Kato et al., 1991, Aoki et al, 1991]. High power strained MQW lasers were also investigated as the pumping light sources for erbium-doped-fiber amplifiers. High output power operations of 385 mW and 290 mW were demonstrated in 0.98 mm and 1.48 mm wavelengths, respectively [Endo et al., 1992; Tatoh et al., 1993]. Short-wavelength laser diodes are very important as the light sources for information-processing systems. Highly reliable 630nm-band AlGaInP laser diodes were realized by introducing a strained mutiquantum-well grown on a misoriented GaAs substrate [Honda et al., 1992 ; Tanaka et al., 1993]. The first cw operation of a laser diode fabricated from a wide-band-gap ZnMgSSe was demonstrated at a wavelength of 447nm at 77K [Okuyama et al., 1992].

High-speed avalanche photodiodes with gain-bandwidth products of 110 -130 GHz were realized using InAlAs/InGaAs, InAlAs/InGaAsP and InAlAs/InAlGaAs superlattice structures. Flip-chip bonding with back-illumination was introduced for wide 3dB-bandwidths of 12-17GHz, resulting in 10 Gbit/s operations [Hanatani et al., 1993 ; Kagawa et al., 1993 ; Watanabe et al., 1993]. A 3dB-bandwidth of wider than 50 GHz was achieved by introducing a multimode waveguide into a p-i-n InGaAs photodiode. By anti-reflection coating, a quantum efficiency of 68 % was obtained [Kato et al., 1992].

(M. Nakamura)

References

Aoki, M., H.Sano, M.Suzuki, M.Takakashi, K.Uomi and A.Takai, Novel structure MQW electroabsorption modulator/DFB laser integrated device fabricated by selective area growth, Electron. Lett., 27, 2138-2140 (1991)

Endo, K., S.Ishikawa, K.Fukagami and H.Fujii, 0.98 mm InGaAs/AlGaAs strained quantum-well high-power laser diodes for EDFA pumping, OEC'92 Technical Digest, 17B1-1 (1992)

Hanatani, S., H.Nakamura, S.Tanaka, C.Notsu, H.Sano and K.Ishida, Superlattice avalanche photodiode with a gain-bandwidth product larger than 100 GHz for very-high-speed systems, OFC/IOOC'93 Technical Digest, ThG3, 187-188 (1993)

Hirayama, Y., M.Morinaga, M.Tahimura, M.Onomura, M.Funemizu, M.Kushibe, N.Suzuki and M.Nakamura, 10Gbit/s low chirp performance of strained layer multiquantum well DFB laser, Electron. Lett., 27, 241-243 (1991)

Honda,S., H.Hamada, M.Shono, R.Hiroyama, K.Yodoshi and T.Yamaguchi, Transverse-mode stabilised 630nm-band AlGaInP strained mutiquantum-well laser diodes grown on misoriented GaAs substrates, Electronics Letters, 28,1365-1367 (1992)

Kagawa, T., Y.Kawamura and H.Iwamura, Wide-bandwidth avalanche photodiode receivers, OFC/IOOC'93 Technical Digest, ThG2, 186 (1993)

Kato, K., S.Hata, K.Kawano, J.Yoshida and A.Kozen, A high-efficiency 50 GHz InGaAs multimode waveguide photodetector, IEEE J.Quantum Electron., QE-28, 2728-2735 (1992)

Kato, T., T.Sasaki, N.Kida, K.Komatsu and I.Mito, Novel MQW DFB laser diode/modulator integrated light source using bandgap control epitaxial growth technique, ECOC'91 Technical Digest, WeB7-1 (1991)

Kunii, T., Y.Matsui, H.Horikawa, T.Kamijoh and T.Nonaka, Narrow linewidth (85kHz) operation in long cavity 1.55 mm-MQW DBR lasers

Okai, M., T.Tsuchiya, A.Takai and N.Chinone, Factors limiting the spectral linewidth of CPM-MQW-DFB lasers, IEEE Photon. Tech. Lett., PTL-4, 526-528 (1992)

Okuyama,H., T.Miyajima, Y.Morinaga, F.Hiei, M.Ozawa and K.Akimoto, ZnSe/ZnMgSSe blue laser diode, Electronics Letters, 28, 1798-1799 (1992)

Tanaka,T., H.Yanagisawa, S.Yano and S.Minagawa, Tensile strained QW structure for low-threshold operation of short-wavelength AlGaInP LDs emitting in the 630nm band, Electronics Letters, 29, 606-607 (1993)

Tatoh, N., H.Kamei, K.Tanida, J.Shinkai, M.Shigematsu, M.Nishimura, H.Hayashi, and K.Nawata, High-power, high-reliability 1.48 mm strained-layer multiple-quantum-well laser and its application to a high-performance erbium-doped-fiber amplifier, OFC'92 Technical Digest, WB4 (1993)

Uomi, K., S.Sasaki, T.Tsuchiya, H.Nakano and N.Chinone, Ultralow chirp and high-speed 1.55 mm multiquantum well l/4-shifted DFB lasers, IEEE Photon.Tech. Lett., PTL-2, 229-230 (1990)

Uomi, K., M.Aoki, T.Tsuchiya and A.Takai, Dependence of high-speed properties on the number of quantum wells in 1.55 mm InGaAs-InGaAsP MQW l/4-shifted DFB lasers, IEEE J. Quantum Electron., QE-29, 355-360 (1993)

Watanabe, I., S.Sugou, H.Ishikawa, T.Anan, K.Makita, M.Tsuji and K.Taguchi, Large gain-bandwidth-product, low-dark-current InAlAs/InAlGaAs quaternary-we11 superlattice avalanche photodiodes, OFC/IOOC'93 Technical Digest, ThG1, 184-185 (1993)



D4. Laser Applications

Remarkable progress has been achieved in high speed and long distance transmission experiments by using high speed optical transmitters, receivers and optical amplifiers at 1.5mm wavelength region. Transmission bit rate-span length have been increased to 10Gb/s-9,000km by using a DFB LD and Er-doped fiber amplifiers [Taga et al., 1993]. Soliton transmission technology has also advanced with the use of Er-doped fiber amplifiers. 20Gbit./s-1,850km transmission experiment was reported [Nakazawa et al., 1993]. Extensive efforts have been made to achieve long-span high-speed coherent lightwave transmission systems and some coherent-optical-transmission field tests have been reported [Hayashi, Y., 1993]. Optical transmission technology for multi-channel CATV systems has also show much progress [Suto et al., 1991, and Shigematsu et al., 1990].

Progress has been made in photonic switching technology and optical computing research. As for photonic switching technology, monolithic LD optical matrix switches [Ikeda et al., 1992] has been reported. Concerning laser diodes for optical information processing, remarkable progress has been achieved in surface emitting lasers such as first room temperature CW operation of long-wavelength surface emitting laser [Baba et al., 1993]. In order to realize optical computing, many novel functional devices have been proposed and demonstrated: for example, an optical neurodevices using a 2-D variable sensitivity photodiode array [Kyuma et al, 1992], a 2-D VSTEP device array [Ogura et al., 1992], an EARS (exciton absorptive reflection switch) [Amano et al., 1991], and a device which integrates an laser and a heterojunction phototransistor [Noda et al., 1992].

Many reports were published on a variety of measurement principles and applications. Remarkable progress has been achieved in fiber-optic gyroscope. Quite-high stability was obtained in an optical passive ring-resonator gyro [Hotate et al., 1991]. Distributed fiber sensor technology has also shown much progress. A variable wavelength OTDR was developed with a combination of an LD-pumped Nd:YLF laser and a Raman fiber [Wada et al, 1992], and the detectable length of OTDR was remarkably improved with the use of erbiumdoped fiber amplifiers [Izumita et al., 1992]. Laser-scan micrometer technology [Jiang et al., 1991] and photon scanning tunneling micorscope technology have also advanced [Kawata et al., 1991].

(A. Ishida)

References

Amano, C., S.Matsuo, and T.Kurokawa, Novel photonic switch arrays consisting of vertically integrated multiple-quantum-well reflection modulators and phototransistors: exciton absorptive reflection switch, IEEE Photonics Tech. Lett., 3, 736 (1991)

Baba, T., Y.Yogo, K.Suzuki, F.Koyama, and K.Iga, Low threshold room temperature pulsed and -31C CW operations of 1.3mm GaInAsP/InP buried heterostructure surface emitting lasers, OFC'93 Technical Digest, PD28 (1993)

Hayashi, Y., Implementation of a practical coherent trunk system, OFC'93 Technical Digest, ThH1 (1993)

Hotate, K. and K.Takiguchi, Drift reduction in an optical passive ring-resonator gyro, SPIE Fiber Optic Gyros: 15th Anniversary Conf., Boston (1991)

Ikeda, M., S.Oku, Y.Shibata, T.Suzuji, and M.Okayasu, Loss less 4x4 monolithic LD optical matrix switches, International Topical Meeting on Photonic Switching 792, 2D1 (1992)

Izumita, H., Y.Koyamada, I.Sankawa, and S.Furukawa, Coherent optical time-domain reflectometer with a 40-dB dynamic range enhanced with erbium-doped fiber amplifiers, OFC'92, Technical Digest, WK-6 (1992)

Jiang, S., N.Tomita, H.Ohsawa, and M.Ohtsu, A photon scanning tunneling microscope using an AlGaAs laser, Jpn. J. Appl. Phys., 30, 2107 (1991)

Kawata, S., R.Arimoto, and O.Nakamura, Three-dimensional optical-transfer-function analysis for a laser-scan fluorescence miroscope with an extended detector, J. Opt. Soc. Am. A8, 171 (1991)

Kyuma, K., Y.Nitta, E.Lange, and W.Zhang, Optical neurodevices based on a 2-D VSPD array, 4th Optoelectronics Conference, Technical Digest, 16C4-1 (1992)

Nakazawa, M., K.Suzuki, E.Yamada, H.Kubota, M.Takaya, Y.Kimura, 20Gbit/s-1,850 km and 40 Gbit/s-750km soliton data transmission using eribium-doped fiber amplifiers, OFC'93 Technical Digest, PD-9 (1993).

Noda, S., T.Takayama, K.Shibata, and A.Sasaki, High-gain and very sensitive photonic switching device by integration of heterojunction phototransistor and laser diode, IEEE Trans. Electron Devices, 39, 305 (1992)

Ogura, I., H.Kosaka, T.Numai, M.Sugimoto, and K.Kasahara, Cascadable optical switching characteristics in vertical-to-surface transmission electrophotonic devices operated as vertical cavity lasers, Appl. Phys. Lett., 60,799 (1992)

Shigematsu, M., K.Nakazato, T.Okita, Y.Tagami, and K.Nawata, Field test of multichannel AM-VSB transmission using an erbium doped optical fiber amplifier at 1.55um wavelength range in the CATV network, Optical Amplifiers and Their Applications Topical Meeting, WB3 (1990)

Suto, K., K.Kikushima, T.Kokubun, H.Yoshinaga, S.Matsui, T.Hirota, and E.Yoneda, An SCM multi-channel video distribution system for passive double star local networks, 3rd IEEE Workshop on Local Optical Networks, 6.4 (1991)

Taga, H., N.Edagawa, H.Tanaka, M.Suzuki, S.Yamamoto, H.Wakabayashi, 10Gbit/s, 9,000km IM-DD transmission experiments using 274 Er-doped fiber amplifier repeaters, OFC'93 Technical Digest, PD-1(1993)

Wada, F., M.Ishii, A.Wada, T.Shiota, and R.Yamauchi, Variable wavelength optical time-domain reflectometry, OFC'92, Technical Digest WK-8 (1992)



D5. Solid State Memories

The 64Mb DRAMs have now gone to the first prototype stage [Oowaki et al.,1991; Taguchi et al.,1991] and the 256Mb DRAMs have gone to the first experimental stage [Hasegawa et al.,1993; Kitsukawa et al.,1993; Sugibayashi et al.,1993]. The semiconductor industry,including DRAM,is confronted with serious economic problems resulting mainly from a steep increase in investment [Komiya,1993]. Application-specific DRAMs with fast operation modes such as cache DRAM [Dosaka et al,1992], synchronous DRAM,rambus DRAM [Kushiyama et al,1992] could be major products to follow the clock cycle progress in MPUs and ASICs.

The trend toward faster access time was very evident in high density SRAM design. Utilizing 0.35mm design rule,a 9ns 16Mb CMOS SRAM [Seno et al.,1993] and 0.25mm design rule, a 15ns 16Mb CMOS SRAM [Sasaki et al.,1993] were developed. BiCMOS SRAMs have also advanced;a 9ns/430mW 4Mb BiCMOS SRAM [Kato et al.,1992] and a 6ns/750mW 4Mb ECL BiCMOS SRAM [Nakamura et al.,1992]. The Low power SRAMs for battery operation were developed;a 7ns/140mW 1Mb CMOS SRAM [Sasaki et al.,1992] and a 68ns/21mW 4Mb CMOS SRAM [Murakami et al.,1991]. The RAMs fabricated using GaAs have also improved;a 1.2ns HEMT 64k SRAM [Suzuki et al.,1991].

A 5V-Only 4Mb CMOS EEPROM with a compact row decoder was developed[Kuriyama et al.,1992]. A 58ns 5V-Only 16Mb CMOS EEPROM with sector-erase mode [Jinbo et al.,1992] and a 60ns 16Mb CMOS EEPROM with program and erase sequence controller [Nakayama et al.,1991] were developed.Bit density of EPROM has quadrupled to 16Mb [Ohtsuka et al.,1991].

By adding cache logic functions to a SRAM chip, a 0.5W 64kB snoopy Cache memory appeared [Nogami et al.,1991]. SRAMs with logic gate array were also developed; a 1.5ns 256kb BiCMOS SRAM with 11k 60ps logic gates[Tamba et al.,1993] and a system integrated ULSI chip containing eleven 4Mb RAMs,six 64k SRAMs and an 18kG Gate Array [Sato et al.,1992].

(A. Kasami)

References

Dosaka, K., Y.Konishi, K.Hayano, K.Himukashi, A.Yamazaki, C.Hart, M. Kumanoya, H.Hamano and T.Yoshihara, A 100MHz 4Mb Cache DRAM with Fast Copy-Back Scheme, ISSCC Dig. Tech. Papers, 148-149 (1992)

Hasegawa, T., D.Takashima, R.Ogiwara, M.Ohta, S.Shiratake, T.Hamamoto, T.Yamada, M.Aoki, S.Ishibashi, Y.Oowaki, S.Watanabe and F.Masuoka, An Experimental DRAM with a NAND-Structured cell, ISSCC Dig. Tech. Papers,46-47 (1993)

Jinbo, T., H.Nakata, K.Hashimoto, T.Watanabe, K.Ninomiya, T.Urai, M.Koike, T.Sato, N.Kodama, K.Oyama and T.Okazawa,,A 5V-Only 16Mb Flash Memory with Sector-Erase Mode, ISSCC Dig. Tech. Papers, 154-155 (1992)

Kato, H., A.Suzuki, T.Hamano, T.Kobayashi, K.Sato, T.Nakayama, H.Gojihbori, T.Maeda and K.Ochii, A 9ns 4Mb BiCMOS SRAM with 3.3V Operation,ISSCC Dig. Tech. Papers, 210-211 (1992)

Kitsukawa, G., M.Horiguchi, Y.Kawajiri, T.Kawahara, T.Akiba, Y.Kawase, T.Tachibana, T.Sakai, M.Aoki, S.Shyukuri, K.Sagara, R.Nagai, N.Hasegawa, N.Yokoyama, T.Kisu, H.Yamashita, T.Kure, and T.Nishida, 256Mb DRAM Technologies for File Applications, ISSCC Dig. Tech. Papers, 48-49 (1993)

Komiya, H., Future Technological and Economic Prospects for VLSI,ISSCC Dig.Tech. Papers, 16-19 (1993)

Kuriyama, M., S.Atsumi, A.Umezawa, H.Banba, K.Imamiya, K.Naruke, S.Yamada, E.Obi, M.Oshikiri, T.Suzuki, M.Wada, and S.Tanaka, A 5V-Only 0.6um Flash EEPROM with Row Decoder Scheme in Triple-Well Structure, ISSCC Dig. Tech. Papers, 152-153 (1992)

Kushiyama, N., S.Ohshima, D.Stark, K.Sakurai, S.Takase, T.Furuyama, R.Barth, J.Dillon, J.Gasbarro, M.Griffin, M.Horowitz, V.Lee, W.Lee, and W.Leung, 500Mbyte/sec data-rate 512kbits x9 DRAM using a novel I/O interface, Symposium on VLSI Circuits Dig. Tech. Papers, 66-67 (1992)

Murakami, S., K.Fujita, M.Ukita, K.Tsutsumi, Y.Inoue, O.Sakamoto, M.Ashida, Y.Nishimura, Y.Kohno, T.Nishimura, and K.Anami, A 21 mW 4Mb CMOS SRAM for Battery Operation, ISSCC Dig. Tech. Papers, 46-47 (1991)

Nakagawa, K., M.Kanagawa, and T.Yabu, A 40ns 64Mb DRAM with a Current-Sensing Data-Bus Amplifier, ISSCC Dig. Tech. Papers, 112-113 (1991)

Nakamura, K., T.Oguri, T.Atsumo, M.Takada, A.Ikemoto, H.Suzuki, T.Nishigori, and T.Yamazaki, A 6ns 4Mb ECL I/O BiCMOS SRAM with LV-TTL Mask Option,ISSCC Dig. Tech. Papers, 212-213 (1992)

Nakayama, T., S.Kobayashi, Y.Miyawaki, Y.Terada, N.Ajika, M.Ohi, H.Arima, T.Matsukawa, and T.Yoshihara, A 60ns 16Mb Flash EEPROM with Program and Erase Sequence Controller, ISSCC Dig. Tech. Papers, 260-261 (1991)

Nogami, K., T.Shirotori, T.Kobayashi, Y.Fujimoto, Y.Biwaki, H.Nohara, M.Kobayashi, K.Kobayashi, and K.Sawada, A 0.5W 64kB Snoopy Cache Memory with Flexible Expandability, ISSCC Dig. Tech. Papers, 266-267 (1991)

Ohtsuka, N., J.Miyamoto, K.Imamiya, N.Tomita, Y.Iyama, S.Mori, Y.Ohshima, N.Arai, Y.Kaneko, E.Sakagami, K.Yoshikawa, and S.Tanaka, A 62ns 16Mb CMOS EPROM with Address Transition Detection Technique, ISSCC Dig. Tech. Papers, 262-263 (1991)

Oowaki, Y., K.Tuchida, Y.Watanabe, D.Takashima, M.Ohta, H.Nakano, S.Watanabe, A.Nitayama, F.Horiguchi, K.Ohuchi, F.Masuoka, and H.Hara, A 33ns 64Mb DRAM, ISSCC Dig.Tech. Papers, 114-115 (1991)

Sasaki, K., K.Itabashi, K.Ueda, K.Komiyaji, T.Yamanaka, N.Hashimoto, H.Toyoshima, F.Kojima, and A.Shimizu, A 7ns 140mW 1Mb CMOS SRAM with Current Sense Amplifier, ISSCC Dig, Tech. Papers, 208-209 (1992)

Sasaki, K., K.Ueda, K.Takasugi, H.Toyoshima, T.Yamanaka, N.Hashimoto, and N.Ohki, A 16Mb CMOS SRAM with a 2.3mm2 Single-Bit-Line Memory Cell, ISSCC Dig. Tech. Papers, 250-251 (1993)

Sato, K., K.Fujita, H.Miyazawa, M.Shirai, M.Kobayashi, M.Ishihara, and T.Nakao, A System Integrated ULSI Chip Containing Eleven 4Mb RAMs, Six 64k SRAMs and an 18kG Gate Array, ISSCC Dig. Tech. Papers, 52-53 (1992)

Seno, K., K.Knorpp, L.Shu, F.Miyaji, M.Sasaki, M.Takeda, T.Yokoyama, K.Fujita, T.Kimura, Y.Tomo, P.Chuang, and K.Kobayashi, A 9ns 16Mb CMOS SRAM with Offset Reduced Current Sense Amplifier, ISSCC Dig. Tech. Papers, 248-249 (1993)

Sugibayashi, T., T.Takeshima, I.Naritake, T.Matano, H.Takada, I.Aimoto, K.Furuta, M.Fujita, T.Saeki, H.Sugawara, T.Murotani, N.Kasai, K.Shibahara, K.Nakajima, H.Hada, T.Hamada, N.Aizaki, T.Kunio, E.Kakehashi, K.Masumori, and T.Tanigawa, A 256Mb DRAM with Multi-Divided Array Structure, ISSCC Dig. Tech. Papers, 50-51 (1993)

Suzuki, M., S.Notomi, M.Ono, N.Kobayashi, E.Mitani, K.Odani, T.Mimura, and M.Abe, A 1.2 ns HEMT 64k SRAM, ISSCC Dig. Tech. Papers, 48-49 (1991)

Taguchi, M., H.Tomita, T.Uchida, Y.Oonishi, K.Sato, T.Ema, M.Higashitani,

Tamba, N., K.Akimoto, M.Ohhayashi, T.Hiramoto, T.Kokubu, S.Ohmori, T.Muraya, A.Kishimoto, S.Tsuji, H.Hayashi, H.Handa, T.Igarashi, T.Fujiwara, K.Watanabe, A.Uchida, M.Odaka, H.Nanbu, K.Yamaguchi, and T.Ikeda, A 1.5ns 256kb BiCMOS SRAM with 11k 60ps Logic Gates, ISSCC Dig. Tech. Papers, 246-247 (1993)



D6. Cryoelectronics

A multichip 4-bit superconducting computer named ETL-JC1 has been developed. This is the first Josephson computer which can execute the computer program stored in the ROM chip. The computer consists of four Josephson LSI chips consisting more than 22,000 Nb/AlOxide/Nb junctions with a 3 mm rule. The 128-step program was execute fully in this computer and a total power dissipation was 6.2 mW [Takada et al., 1991]. A fully decoded 4-Kbit Josephson non-destructive RAM with vortex transitional memory cells has been operated successfully. It was made of more than 25,000 Nb/AlOx/Nb Josephson junctions with a 1.5-mm design rule. An access time of 580 psec and a power consumption of 6.7 mW were obtained [Tahara et al., 1991].

A planar-type junction of HoBa2Cu3O7-x-La1.5Ba1.5Cu3O7-y-HoBa2Cu3O7-xwas fabricated and supercurrent through the normal layer La1.5Ba1.5Cu3O7-y was detected up to 69 K. The superconducting decay length of 65 nm was two orders of magnitude larger than the value calculated from the proximity effect [Tarutani et al., 1991]. A YBCO emitter and collector were fabricated on a high-permittivity SrTiO3 substrate with a back-contact base electrode. Transistor characteristics in which both voltageand current gains exceeded one, were observed at 4.2 K [Yoshida et. al.,1991]. A superconducting metal base transistor using Bi(Ba, Rb)O3 and niobium doped SrTiO3 has been developed. Indium was used for the collector to make a proper barrier between indium and the BRBO film. Current gain of nearly 1 was obtained at 50 K [Abe et al., 1993]. A phase-controlled superconducting device based on Andreev reflection and superconducting proximity effect has been fabricated. A Nb-Si boundary was used as a mirror for electron waves in Si. Interference peaks were observed and their energies were controlled by gate voltage [Hatano et. al., 1992].

A superconducting small antenna made of YBCO has been developed. It was constructed from a self-resonating helical radiator and a quarter-wave matching circuit. The gain and bandwidth measured at 478 MHz and 81 K were respectively -1.5 dBi and 0.35 % [Itoh et al., 1992]. A super-conducting frequency downconverter, which was made of a YBCO step-edge micobridge Josephson junction, two 12 GHz YBCO microstrip bandpass filters, a 1 GHz YBCO filter, has been developed for receiving direct broadcast satellite signals. The conversion efficiency was -14.5 dB at 15 K and small LO power (-25 dBm) [Suzuki et al., 1992].

Superconductivity in the infinite-layer compound (SrxCa1-x)Cu1-yO2 was confirmed at 110 K. This new superconductor was synthesized under the pressure up to 6 GPa and a temperature of 1173-1473 K [Azuma et. al.,1992]. A new copper-oxide superconductor containing carbon (BaxSr1-x)2Cu1+yO2(Co3)1-y was synthesized under high oxygen pressures. The superconductor synthesized under 50 atm O2 showed a Tc(onset) of about 40 K and a Tc(zero) of about 26 K [Kinoshita et al., 1992]. Thin films of Ca1-xSrxCuO2 have been grown by alternate deposition of CaSr and CuO2 atomic layers in a low pressure NO2 ambient. Resistive and magnetic anomalies were observed in the film at 90-180 K [Li et. al., 1992].

(T.Kimura)

References

Abe, H., F. Toda, and M. Ogiwara, Metal base transistor of In/Bi(Ba,Rb)O3/SrTiO3(Nb), IEEE Elect. Dev. Lett. 14, 100-102 (1993)

Azuma, M., Z. Hiroi, M. Takano., Y. Bando, and Y. Takeda, Superconductivity at 110 K in the infinite-layer compound (SrxCa1-x)Cu1-yO2, Nature 356, 775-776 (1992)

Hatano, M., K. Saito, T. Nishino, and K. Takagi, Characteristics of the phase-controlled superconducting device based on Andreev reflection and superconducting proximity effect at Nb-Si boundary, Appl. Phys. Lett., 61, 2604-2606 (1992)

Itoh, K., O. Ishii, Y. Koshimoto, and K. Cho, High-temperature superconducting small helical antenna, IEICE Trans. Electron., E75-C, 246- 251 (1992)

Kinoshita, K., and T. Yamada, A new copper oxide superconductor containing carbon, Nature 357, 313-315 (1992)

Li, X., T. Kawai, and S. Kawai, Observation of resistive and magnetic anomalies at 90 - 180 K in artificially layered Ca1-xSrxCuO2 thin films grown by laser molecular beam epitaxy, Jpn J. Appl. Phys., 31, L934-L937 (1992)

Suzuki, K., S. Yoshikawa, K. Yamaguchi, K. Hayashi, S. Fujino, T. Takenaka, K.Imai, F. Suginoshita, N. Yazawa, and Y. Enomoto, Performance of a Y-Ba-Cu-O Josephson junction/filter, Proc. ISS'92 AD-07 (Kobe,1992)

Takada, S., H. Nakagawa, I. Kurosawa, M. Aoyagi, S. Kosaka, Y. Okada, and Y.Hamazaki, A multichip superconducting microcomputer ETL-JC1, IEEE Trans.MAG-27, 2610-2617 (1991)

Tahara, S., I. Ishida, S. Nagasawa, M. Hidaka, H. Tsuge, and Y. Wada, 4-Kbit Josephson nondestructive read-out RAM operated at 580 psec and 6.7 mW, IEEE Trans. MAG-27, 2627-2633 (1991)

Tarutani, Y., T. Fukazawa, U. Kabasawa, A. Tsukamoto, M. Hiratani, and K.Takagi, Superconducting characteristics of a planar-type HoBa2Cu3O7-x-La1.5Ba1.5Cu3O7-y-HoBa2Cu3O7-x junction, Appl. Phys. Lett., 58, 2707-2709(1991)

Yoshida, A., H. Tamura, H. Takauchi, and S. Hasuo, Transistor characteristics in a three-terminal structure having YBa2Cu3O7-x electrodes on an insulating SrTiO3 substrate, Appl. Phys. Lett., 59, 1242-1244 (1991)



D7. Acoustic Devices

A 900MHz range wideband double mode SAW(DMS) filter was developed for the front end of a mobile transceiver [Morita et al., 1992]. Low loss SAW filters of 900MHz and 1.5GHz range were fabricated using ZnO epitaxial films sputtered on sapphire substrates [Koike et al., 1993]. The effect of the aluminum electrode thickness on the temperature characteristics of the SAW devices was investigated [Murota et al., 1992]. A method of controling both the 1st- and 2nd-order temperature coefficients was found by using a Ta2O5/ZnO/fused quartz substrate[Nakagawa et al., 1991]. Fabrication techniques of submicron width electrodes were studied using dyed photoresist [Hosaka et al., 1990] and electron-beam lithography [Nagata et al., 1992]. An improvement of the iron-boron film was achieved for magneto-surface-acoustic-wave media [Tsuboi et al., 1990].

An underwater transducer employing ZnO/pyrexglass composite diaphragm on a Si substrate and working at 155MHz was developed[Yamada et al., 1990]. An array transducer of 100MHz using chemically etched ZnO film was realized [Kushida et al., 1991]. These transducers are supposed to be applied for characterization of soft or liquid materials. BaTiO3 ceramic with low coercive-field was investigated for small amplitude transducers[Nagata et al., 1990]. For high-power applications, a focusing-type transducer using burst drive was proposed and numerically simulated[Nakazawa et al., 1992].

An improved ultrasonic motor using 2 degenerate bending vibration modes of a disk was proposed for simple construction [Takano et al., 1990]. An unique mechanism of an ultrasonic motor without mechanical friction was found [Yamayoshi et al., 1991]. This motor was considered to be driven by ultrasonic radiation. Elastic fins were applied to an ultrasonic motor driver for miniaturization [Uchiki et al., 1991].

LiNbO3 single-crystal instead of ceramics materials was investigated for piezoelectric transformers to decrease the elastic loss when driven with large amplitude. An energy-trapping type piezoelectric transformer was developed using interdigital transducers [Ueda et al., 1992]. A Rosen-type piezoelectric transformer was realized using a 128 rotated Y-cut LiNbO3 substrate [Nakamura et al., 1991]. The dependence of the voltage ratio on load resistance was studied with a transformer composed of a 140 rotated Y-cut plate [Sato et al., 1991].

A waveguide optical deflector using surface acoustic waves was studied for optical disk tracking [Arimoto et al., 1990]. A waveguide-type multifrequency acousto-optical modulator which generated independently modulated multibeams was proposed for a laser beam printer [Hatori et al., 1992].

(Y. Komatsu)

References

Arimoto, A., K.Muraoka, T.Shimano, K.Senda, and S.Ishikawa, Waveguide optical deflector for an optical disk tracking actuator using a surface acoustic wave device, Appl. Optics, 29, 247-250

Hatori, M., H.Miura, H.sunagawa, M.Takeuchi, and K.Yamanouchi, Waveguide-type multifrequency AO modulators, IEICEJ Technical Report US92-51 (1992)

Hosaka, N., A.Yuhara, T.Kobayashi, H.Watanabe, and J.Yamada, Precise fabrication technique of UHF SAW Al electrodes and leaky SAW propagation characteris on 36 Y-X LiTaO3, Japan. J. Appl. Phys., 30, Suppl.30-1, 169-172 (1991)

Koike, J., K.Shimoe, H.Ieki, GHz range low-loss SAW filter using ZnO/sapphire substrate, IEICEJ Technical Report US92-89 (1993)

Kushida, K., Y.Ito, H.Takeuchi, H.Kanda, K.Sugawara, and H.Onozato, 100 MHz band ultrasonic array transducers utilizing epitaxially grown ZnO films, Ultrasonics Int. 91 Conf. Proc., 379-382 (1991)

Morita, T., Y.Watanabe, Y.Ogawa, and Y.Nakazawa, 900MHz range wideband double mode SAW filters, IEICEJ Technical Report US92-8 (1992)

Murota, M., T.Hirano, and Y.Shimizu, Effects of aluminum thickness on temperature characteristics of surface acoustic wave devices on the quartz LST-cut, Electronics and Communications in Japan, Part 3, 75, 73-80 (1992)

Nagata, K., Preparation of BaTiO3 ceramic vibrator with low coersive-field, IEICEJ Technical Report US90-78 (1990)

Nagata, T., M.Kobayashi, K.Kosemura, M.Satoh, S.Ando, T.Miyashita, O.Ikata, and Y.Satoh, EB lithography for fabricating a GHz SAW filter on LiTaO3 substrate, SPIE 1671, 183-190 (1992)

Nakagawa, Y., T.Yoneda, K.Hasegawa, and K. Hosaka, Control of second order temperature coefficient of SAW propagating in thin film layers, Japan. J. Appl. Phys., vol.31, Suppl.31-1, 198-200 (1992)

Nakamura, K. and Y.Adachi, Piezoelectric transformers using single crystals of LiNbO3, IEICEJ Technical Report US90-38 (1990)

Nakazawa, K., M.Kurosawa, K.Koike, and S.Ueha, Focusing type high power transducer using burst drive, IEICEJ Technical Report US92-44 (1992)

Sato, M., M.Ueda, H.Hasegawa, and N.Wakatsuki, Load resistance characteristics of LiNbO3 Piezoelectric transformers, Japan. J. Appl. Phys., Suppl.31-1, 181-183 (1992)

Takano, T., Y.Tomikawa, and T.Ogasawara, Same phase drive type ultrasonic motors using two degenerate bending vibration modes of a disk, IEICEJ Technical Report US90-50 (1990)

Tsuboi, Y., N.Yokokawa, M.Inoue, and T.Fujii, Improvement of magnetic properties of iron-boron films by hydrogen mixing in sputtering gas for magnetosurface-acoustic wave media, Japan. J. Appl. Phys., 29, Suppl.29-1, 162-164 (1990)

Uchiki, T., K.Nakamura, M.Kurosawa, S.Ueha, and T.Nakazawa, Elastic fin ultrasonic micromotor, IEICEJ Technical Report US91-58 (1991)

Ueda, M., M.Satoh, S.Ohtsu, and N.Wakatsuki, Energy trapping type piezoelectric transformer, IEICEJ Technical Report US92-11 (1992)

Yamada, Y., K.Hashimoto, V.Rajendran, and M.Yamaguchi, High performance ultrasonic transducers employing ZnO/pyrex-glass diaphragm structure on a Si substrate, Japan. J. Appl. Phys., 30, Suppl.30-1, 114-116 (1991)

Yamayoshi, Y. and S.Hirose, A study on the ultrasonic motor not using mechanical friction force, IEICEJ Technical Report US91-41 (1991)

Contents

Commission C ('93)

Commission E ('93)

Commission D ('96)

Commission D ('99)